MJE200STU
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- Mfr.Part #
- MJE200STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A TO126-3
- Stock
- 4,509
- In Stock ：
- 4,509
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Max Power Dissipation :
- 15W
- Factory Lead Time :
- 6 Weeks
- Mount :
- Through Hole
- Current Rating :
- 5A
- Collector Emitter Saturation Voltage :
- 1.8V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Weight :
- 761mg
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 25V
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Base Part Number :
- MJE200
- Frequency :
- 65MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Collector Emitter Breakdown Voltage :
- 25V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Gain Bandwidth Product :
- 65MHz
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Element Configuration :
- Single
- hFE Min :
- 45
- Number of Terminations :
- 3
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Power Dissipation :
- 15W
- Collector Base Voltage (VCBO) :
- 40V
- Transition Frequency :
- 65MHz
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 25V
- Max Collector Current :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Published :
- 2001
- Emitter Base Voltage (VEBO) :
- 8V
- Datasheets
- MJE200STU
MJE200STU Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
MJE200STU Overview
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.8V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 1A, 5A.An emitter's base voltage can be kept at 8V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 65MHz.In extreme cases, the collector current can be as low as 5A volts.
MJE200STU Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJE200STU Applications
There are a lot of ON Semiconductor
MJE200STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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