MJD253-1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

Current - Collector Cutoff (Max) :

100nA ICBO

Element Configuration :

Single

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

100V

Number of Elements :

1

Surface Mount :

No

hFE Min :

40

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Frequency :

40MHz

Radiation Hardening :

No

Transistor Type :

PNP

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Voltage - Rated DC :

-100V

Current Rating :

-4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Factory Lead Time :

8 Weeks

Number of Terminations :

3

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

100V

Case Connection :

COLLECTOR

Height :

2.38mm

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Transistor Application :

AMPLIFIER

Number of Pins :

4

Operating Temperature :

-65°C~150°C TJ

Polarity/Channel Type :

PNP

Width :

6.35mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Halogen Free :

Halogen Free

Max Collector Current :

4A

Base Part Number :

MJD253

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

12.5W

Emitter Base Voltage (VEBO) :

7V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Base Voltage (VCBO) :

100V

Power Dissipation :

1.4W

Gain Bandwidth Product :

40MHz

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

600mV

Pin Count :

4

Transition Frequency :

40MHz

Published :

2005

Length :

6.73mm

Lead Free :

Lead Free

ECCN Code :

EAR99