KSP2907ACTA
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- Mfr.Part #
- KSP2907ACTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO92-3
- Stock
- 14,984
- In Stock ：
- 14,984
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 200MHz
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- -5V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Transition Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- Base Part Number :
- KSP2907A
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Current Rating :
- -600mA
- Number of Terminations :
- 3
- Weight :
- 240mg
- Pbfree Code :
- yes
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- -60V
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Voltage - Rated DC :
- -60V
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Max Power Dissipation :
- 625mW
- Lifecycle Status :
- ACTIVE (Last Updated: 15 hours ago)
- Collector Emitter Saturation Voltage :
- -1.6V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 6 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Power Dissipation :
- 625mW
- Turn On Time-Max (ton) :
- 45ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSP2907ACTA
KSP2907ACTA Documents
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP2907ACTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of -1.6V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
KSP2907ACTA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
KSP2907ACTA Applications
There are a lot of ON Semiconductor
KSP2907ACTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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