KSP2222ABU
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- Mfr.Part #
- KSP2222ABU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 64,742
- In Stock ：
- 64,742
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 300MHz
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Published :
- 2007
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- 40V
- Max Power Dissipation :
- 625mW
- Transition Frequency :
- 300MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Frequency :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Pbfree Code :
- yes
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Current Rating :
- 600mA
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Element Configuration :
- Single
- Width :
- 3.86mm
- Base Part Number :
- KSP2222
- Height :
- 4.58mm
- Max Collector Current :
- 600mA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Turn Off Time-Max (toff) :
- 285ns
- Collector Emitter Saturation Voltage :
- 1V
- Collector Base Voltage (VCBO) :
- 75V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Length :
- 4.58mm
- Weight :
- 179mg
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- KSP2222ABU
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSP2222ABU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ABU Applications
There are a lot of ON Semiconductor
KSP2222ABU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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