KSP2222A
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- Mfr.Part #
- KSP2222A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR
- Stock
- 36,892
- In Stock ：
- 36,892
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 300MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Base Part Number :
- KSP2222
- Lead Free :
- Lead Free
- Frequency :
- 300MHz
- Max Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Max (toff) :
- 285ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Base Voltage (VCBO) :
- 75V
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 300MHz
- Factory Lead Time :
- 6 Weeks
- Length :
- 4.58mm
- Terminal Position :
- BOTTOM
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Width :
- 3.86mm
- Packaging :
- Bulk
- Voltage - Rated DC :
- 40V
- Collector Emitter Saturation Voltage :
- 1V
- Max Collector Current :
- 600mA
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Weight :
- 179mg
- Mount :
- Through Hole
- Number of Pins :
- 3
- hFE Min :
- 100
- Current Rating :
- 600mA
- Published :
- 2007
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 40V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Height :
- 4.58mm
- Datasheets
- KSP2222A
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSP2222ABU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ABU Applications
There are a lot of ON Semiconductor
KSP2222ABU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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