KSP2222ATF
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- Mfr.Part #
- KSP2222ATF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 47,260
- In Stock ：
- 47,260
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Collector Base Voltage (VCBO) :
- 75V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- KSP2222
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10mV
- Width :
- 3.86mm
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 40V
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 40V
- Frequency :
- 300MHz
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 1V
- hFE Min :
- 100
- Turn Off Time-Max (toff) :
- 285ns
- Current Rating :
- 600mA
- Terminal Finish :
- Tin (Sn)
- Published :
- 2004
- Length :
- 4.58mm
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 300MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Number of Pins :
- 3
- Transition Frequency :
- 300MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Max Collector Current :
- 600mA
- Collector Emitter Breakdown Voltage :
- 40V
- Height :
- 4.58mm
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Weight :
- 240mg
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Datasheets
- KSP2222ATF
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
KSP2222ATF Overview
In this device, the DC current gain is 100 @ 150mA 10mV, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ATF Features
the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATF Applications
There are a lot of ON Semiconductor
KSP2222ATF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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