KSP2222ATF
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- Mfr.Part #
- KSP2222ATF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 47,260
- In Stock ：
- 47,260
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10mV
- Max Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 40V
- Current Rating :
- 600mA
- Width :
- 3.86mm
- Collector Emitter Saturation Voltage :
- 1V
- Base Part Number :
- KSP2222
- Element Configuration :
- Single
- Power Dissipation :
- 625mW
- Frequency :
- 300MHz
- Published :
- 2004
- Mounting Type :
- Through Hole
- Turn Off Time-Max (toff) :
- 285ns
- Weight :
- 240mg
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Collector Base Voltage (VCBO) :
- 75V
- Terminal Position :
- BOTTOM
- Length :
- 4.58mm
- JESD-609 Code :
- e3
- hFE Min :
- 100
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 625mW
- Height :
- 4.58mm
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Number of Pins :
- 3
- Max Collector Current :
- 600mA
- Transition Frequency :
- 300MHz
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 40V
- Datasheets
- KSP2222ATF
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
KSP2222ATF Overview
In this device, the DC current gain is 100 @ 150mA 10mV, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ATF Features
the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATF Applications
There are a lot of ON Semiconductor
KSP2222ATF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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