KSP2222ATF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Emitter Base Voltage (VEBO) :

6V

Polarity/Channel Type :

NPN

hFE Min :

100

Gain Bandwidth Product :

300MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Power Dissipation :

625mW

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

40V

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Height :

4.58mm

Number of Pins :

3

Frequency :

300MHz

Base Part Number :

KSP2222

Radiation Hardening :

No

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

40V

Transition Frequency :

300MHz

Factory Lead Time :

6 Weeks

Current - Collector Cutoff (Max) :

10nA ICBO

Collector Emitter Saturation Voltage :

1V

Current Rating :

600mA

Length :

4.58mm

Published :

2004

Turn Off Time-Max (toff) :

285ns

Voltage - Rated DC :

40V

Mount :

Through Hole

Weight :

240mg

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

75V

Pbfree Code :

yes

Max Collector Current :

600mA

Terminal Position :

BOTTOM

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Mounting Type :

Through Hole

Max Breakdown Voltage :

40V

Width :

3.86mm

Transistor Element Material :

SILICON

Max Power Dissipation :

625mW

Transistor Type :

NPN

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin (Sn)