KSP2222ATF
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- Mfr.Part #
- KSP2222ATF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 47,260
- In Stock ：
- 47,260
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 600mA
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 40V
- Length :
- 4.58mm
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Terminations :
- 3
- Width :
- 3.86mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Terminal Position :
- BOTTOM
- Base Part Number :
- KSP2222
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Transition Frequency :
- 300MHz
- Factory Lead Time :
- 6 Weeks
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Voltage - Rated DC :
- 40V
- Max Power Dissipation :
- 625mW
- Height :
- 4.58mm
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mount :
- Through Hole
- Power Dissipation :
- 625mW
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- Radiation Hardening :
- No
- Frequency :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10mV
- Number of Pins :
- 3
- Current Rating :
- 600mA
- Turn Off Time-Max (toff) :
- 285ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 75V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Gain Bandwidth Product :
- 300MHz
- Published :
- 2004
- hFE Min :
- 100
- Number of Elements :
- 1
- Weight :
- 240mg
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Datasheets
- KSP2222ATF
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
KSP2222ATF Overview
In this device, the DC current gain is 100 @ 150mA 10mV, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ATF Features
the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATF Applications
There are a lot of ON Semiconductor
KSP2222ATF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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