KSP2222ATA
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- Mfr.Part #
- KSP2222ATA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 27,532
- In Stock ：
- 27,532
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Base Part Number :
- KSP2222
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 40V
- Number of Elements :
- 1
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Collector Emitter Saturation Voltage :
- 1V
- Length :
- 4.58mm
- Collector Base Voltage (VCBO) :
- 75V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 40V
- Packaging :
- Tape and Box (TB)
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Turn Off Time-Max (toff) :
- 285ns
- hFE Min :
- 100
- Current Rating :
- 600mA
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Weight :
- 240mg
- Transition Frequency :
- 300MHz
- Published :
- 2004
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 300MHz
- Max Collector Current :
- 600mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Width :
- 3.86mm
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 625mW
- Height :
- 4.58mm
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Datasheets
- KSP2222ATA
KSP2222ATA Documents
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP2222ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
KSP2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATA Applications
There are a lot of ON Semiconductor
KSP2222ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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