KSP2222ATA
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- Mfr.Part #
- KSP2222ATA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 27,532
- In Stock ：
- 27,532
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Turn Off Time-Max (toff) :
- 285ns
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Saturation Voltage :
- 1V
- Base Part Number :
- KSP2222
- Number of Pins :
- 3
- Weight :
- 240mg
- Voltage - Rated DC :
- 40V
- Frequency :
- 300MHz
- Packaging :
- Tape and Box (TB)
- Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Published :
- 2004
- Mount :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Max Collector Current :
- 600mA
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Width :
- 3.86mm
- Transition Frequency :
- 300MHz
- Height :
- 4.58mm
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Max Power Dissipation :
- 625mW
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Length :
- 4.58mm
- Collector Base Voltage (VCBO) :
- 75V
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 100
- Max Breakdown Voltage :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 300MHz
- Current Rating :
- 600mA
- Datasheets
- KSP2222ATA
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP2222ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
KSP2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATA Applications
There are a lot of ON Semiconductor
KSP2222ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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