KSP2222ATF
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- Mfr.Part #
- KSP2222ATF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 34,819
- In Stock ：
- 34,819
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 75V
- Weight :
- 240mg
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Transition Frequency :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 300MHz
- Turn Off Time-Max (toff) :
- 285ns
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- hFE Min :
- 100
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Current Rating :
- 600mA
- Width :
- 3.86mm
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Base Part Number :
- KSP2222
- Max Power Dissipation :
- 625mW
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Frequency :
- 300MHz
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1V
- Length :
- 4.58mm
- Power Dissipation :
- 625mW
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Max Collector Current :
- 600mA
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 40V
- Height :
- 4.58mm
- Published :
- 2004
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10mV
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Voltage - Rated DC :
- 40V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSP2222ATF
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
KSP2222ATF Overview
In this device, the DC current gain is 100 @ 150mA 10mV, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ATF Features
the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATF Applications
There are a lot of ON Semiconductor
KSP2222ATF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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