KSP2222ATA
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- Mfr.Part #
- KSP2222ATA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 23,274
- In Stock ：
- 23,274
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 40V
- Gain Bandwidth Product :
- 300MHz
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Length :
- 4.58mm
- Width :
- 3.86mm
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2004
- Frequency :
- 300MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Base Part Number :
- KSP2222
- Transition Frequency :
- 300MHz
- Number of Elements :
- 1
- Weight :
- 240mg
- Height :
- 4.58mm
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- 600mA
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Max Power Dissipation :
- 625mW
- Power Dissipation :
- 625mW
- Max Collector Current :
- 600mA
- Collector Emitter Saturation Voltage :
- 1V
- Element Configuration :
- Single
- hFE Min :
- 100
- Voltage - Rated DC :
- 40V
- Turn Off Time-Max (toff) :
- 285ns
- Collector Base Voltage (VCBO) :
- 75V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- KSP2222ATA
KSP2222ATA Documents
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP2222ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
KSP2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATA Applications
There are a lot of ON Semiconductor
KSP2222ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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