KSP2222ATA
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- Mfr.Part #
- KSP2222ATA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 23,274
- In Stock ：
- 23,274
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- hFE Min :
- 100
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Frequency :
- 300MHz
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 1V
- Height :
- 4.58mm
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current Rating :
- 600mA
- Number of Pins :
- 3
- Voltage - Rated DC :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 625mW
- Transition Frequency :
- 300MHz
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Collector Base Voltage (VCBO) :
- 75V
- Length :
- 4.58mm
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Factory Lead Time :
- 6 Weeks
- Weight :
- 240mg
- Base Part Number :
- KSP2222
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Turn Off Time-Max (toff) :
- 285ns
- Packaging :
- Tape and Box (TB)
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 600mA
- Max Power Dissipation :
- 625mW
- Published :
- 2004
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Width :
- 3.86mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Datasheets
- KSP2222ATA
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP2222ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
KSP2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATA Applications
There are a lot of ON Semiconductor
KSP2222ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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