KSP2222ABU
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- Mfr.Part #
- KSP2222ABU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 64,742
- In Stock ：
- 64,742
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSP2222
- Power Dissipation :
- 625mW
- Frequency :
- 300MHz
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Height :
- 4.58mm
- Published :
- 2007
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 40V
- Transition Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Voltage - Rated DC :
- 40V
- Length :
- 4.58mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1V
- Current Rating :
- 600mA
- REACH SVHC :
- No SVHC
- Weight :
- 179mg
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Max Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Voltage (VCEO) :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Turn Off Time-Max (toff) :
- 285ns
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 75V
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 300MHz
- Width :
- 3.86mm
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 45V
- Max Collector Current :
- 600mA
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Datasheets
- KSP2222ABU
,TO-226_straightlead.jpg)
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSP2222ABU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ABU Applications
There are a lot of ON Semiconductor
KSP2222ABU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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