KSP2222ATF
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- Mfr.Part #
- KSP2222ATF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 28,732
- In Stock ：
- 28,732
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- KSP2222
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 75V
- Number of Elements :
- 1
- Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Width :
- 3.86mm
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- BOTTOM
- Length :
- 4.58mm
- Max Collector Current :
- 600mA
- Height :
- 4.58mm
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 40V
- Transition Frequency :
- 300MHz
- Weight :
- 240mg
- Frequency :
- 300MHz
- Mount :
- Through Hole
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current Rating :
- 600mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Gain Bandwidth Product :
- 300MHz
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Published :
- 2004
- Number of Terminations :
- 3
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Through Hole
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10mV
- Operating Temperature :
- 150°C TJ
- Turn Off Time-Max (toff) :
- 285ns
- Collector Emitter Saturation Voltage :
- 1V
- Datasheets
- KSP2222ATF
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
KSP2222ATF Overview
In this device, the DC current gain is 100 @ 150mA 10mV, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ATF Features
the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATF Applications
There are a lot of ON Semiconductor
KSP2222ATF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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