KSP2222ATF
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- Mfr.Part #
- KSP2222ATF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 28,732
- In Stock ：
- 28,732
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 40V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 300MHz
- hFE Min :
- 100
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Polarity/Channel Type :
- NPN
- Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- Weight :
- 240mg
- Max Breakdown Voltage :
- 40V
- Transition Frequency :
- 300MHz
- Number of Pins :
- 3
- Voltage - Rated DC :
- 40V
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 75V
- Max Collector Current :
- 600mA
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Length :
- 4.58mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10mV
- Published :
- 2004
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 1V
- Base Part Number :
- KSP2222
- Current Rating :
- 600mA
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Turn Off Time-Max (toff) :
- 285ns
- Collector Emitter Breakdown Voltage :
- 40V
- Width :
- 3.86mm
- Height :
- 4.58mm
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 625mW
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Datasheets
- KSP2222ATF
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
KSP2222ATF Overview
In this device, the DC current gain is 100 @ 150mA 10mV, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ATF Features
the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATF Applications
There are a lot of ON Semiconductor
KSP2222ATF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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