KSP2907ABU
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- Mfr.Part #
- KSP2907ABU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO92-3
- Stock
- 107,977
- In Stock ：
- 107,977
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Transition Frequency :
- 200MHz
- Collector Base Voltage (VCBO) :
- -60V
- Terminal Finish :
- Tin (Sn)
- Weight :
- 179mg
- Current Rating :
- -600mA
- Emitter Base Voltage (VEBO) :
- -5V
- hFE Min :
- 100
- Turn On Time-Max (ton) :
- 45ns
- Voltage - Rated DC :
- -60V
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -1.6V
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 200MHz
- Power Dissipation :
- 625mW
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 7 Weeks
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Pbfree Code :
- yes
- Packaging :
- Bulk
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 200MHz
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e3
- Length :
- 4.58mm
- Published :
- 2006
- Max Collector Current :
- 600mA
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KSP2907A
- Number of Terminations :
- 3
- Height :
- 4.58mm
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Width :
- 3.86mm
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Datasheets
- KSP2907ABU
,TO-226_straightlead.jpg)
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSP2907ABU Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.6V.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 200MHz.A maximum collector current of 600mA volts is possible.
KSP2907ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
KSP2907ABU Applications
There are a lot of ON Semiconductor
KSP2907ABU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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