KSH122TM
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- Mfr.Part #
- KSH122TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A DPAK
- Stock
- 10,374
- In Stock ：
- 10,374
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Base Part Number :
- KSH122
- Current Rating :
- 8A
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 6 Weeks
- Voltage - Rated DC :
- 100V
- Pbfree Code :
- yes
- Polarity :
- NPN
- Radiation Hardening :
- No
- Weight :
- 260.37mg
- Lead Free :
- Lead Free
- hFE Min :
- 1000
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Transistor Type :
- NPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Number of Terminations :
- 2
- Current - Collector Cutoff (Max) :
- 10μA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 2V
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-252AA
- Max Breakdown Voltage :
- 100V
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Collector Current :
- 8A
- Published :
- 2011
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1.75W
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- KSH122TM
KSH122TM Documents
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NPN - Darlington 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH122TM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 4A 4V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 80mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 8A volts at its maximum.
KSH122TM Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
KSH122TM Applications
There are a lot of ON Semiconductor
KSH122TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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