KSH122TM
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- Mfr.Part #
- KSH122TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A DPAK
- Stock
- 10,374
- In Stock ：
- 10,374
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 6 Weeks
- JEDEC-95 Code :
- TO-252AA
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Current Rating :
- 8A
- Max Collector Current :
- 8A
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10μA
- Voltage - Rated DC :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Published :
- 2011
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- KSH122
- Weight :
- 260.37mg
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 100V
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 2V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- hFE Min :
- 1000
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- NPN
- Max Power Dissipation :
- 1.75W
- Terminal Form :
- Gull wing
- Datasheets
- KSH122TM
,%20SC-63.jpg)
NPN - Darlington 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH122TM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 4A 4V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 80mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 8A volts at its maximum.
KSH122TM Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
KSH122TM Applications
There are a lot of ON Semiconductor
KSH122TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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