KSH112ITU
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- Mfr.Part #
- KSH112ITU
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A IPAK
- Stock
- 5,638
- In Stock ：
- 5,638
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSH112
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1.75W
- Current - Collector (Ic) (Max) :
- 2A
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 20μA
- Supplier Device Package :
- I-PAK
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Frequency - Transition :
- 25MHz
- Datasheets
- KSH112ITU
NPN - Darlington 150°C TJ 20μA TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
KSH112ITU Overview
In this device, the DC current gain is 1000 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Supplier device package I-PAK comes with the product.The device exhibits a collector-emitter breakdown at 100V.
KSH112ITU Features
the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the supplier device package of I-PAK
KSH112ITU Applications
There are a lot of ON Semiconductor
KSH112ITU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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