KSH117ITU
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- Mfr.Part #
- KSH117ITU
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A IPAK
- Stock
- 7,366
- In Stock ：
- 7,366
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSH117
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 25MHz
- Current - Collector Cutoff (Max) :
- 20μA
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Collector (Ic) (Max) :
- 2A
- Power - Max :
- 1.75W
- Transistor Type :
- PNP - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Packaging :
- Tube
- Datasheets
- KSH117ITU
PNP - Darlington 150°C TJ 20μA TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
KSH117ITU Overview
In this device, the DC current gain is 1000 @ 2A 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 4A.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
KSH117ITU Features
the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
KSH117ITU Applications
There are a lot of ON Semiconductor
KSH117ITU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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