KSH112TM

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Mfr.Part #
KSH112TM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN DARL 100V 2A DPAK
Stock
38,162
In Stock :
38,162

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
2A
Pbfree Code :
yes
ECCN Code :
EAR99
JESD-609 Code :
e3
Number of Elements :
1
Frequency - Transition :
25MHz
Current - Collector Cutoff (Max) :
20μA
Collector Emitter Breakdown Voltage :
100V
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
100V
Packaging :
Tape and Reel (TR)
Element Configuration :
Single
Max Power Dissipation :
1.75W
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 2A 3V
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Max Breakdown Voltage :
100V
Collector Emitter Saturation Voltage :
2V
Lead Free :
Lead Free
Current Rating :
2A
Radiation Hardening :
No
JESD-30 Code :
R-PSSO-G2
Mount :
Surface Mount
Factory Lead Time :
9 Weeks
Collector Emitter Voltage (VCEO) :
100V
Base Part Number :
KSH112
Collector Base Voltage (VCBO) :
100V
Terminal Form :
Gull wing
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Height :
2.3mm
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
Width :
6.1mm
Emitter Base Voltage (VEBO) :
5V
Transition Frequency :
25MHz
Number of Terminations :
2
Number of Pins :
3
hFE Min :
1000
Transistor Type :
NPN - Darlington
Weight :
260.37mg
Mounting Type :
Surface Mount
Polarity :
NPN
Length :
6.6mm
Transistor Element Material :
SILICON
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 5 days ago)
Datasheets
KSH112TM
Introducing Transistors - Bipolar (BJT) - Single onsemi KSH112TM from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:KSH112, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, KSH112TM pinout, KSH112TM datasheet PDF, KSH112TM amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSH112TM ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSH112TM


NPN - Darlington 150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

KSH112TM Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 2A 3V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 25MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 2A volts.

KSH112TM Features


the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz


KSH112TM Applications


There are a lot of ON Semiconductor
KSH112TM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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