KSH112TM
- Mfr.Part #
- KSH112TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A DPAK
- Stock
- 38,162
- In Stock :
- 38,162
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 2A
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Frequency - Transition :
- 25MHz
- Current - Collector Cutoff (Max) :
- 20μA
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 100V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Max Power Dissipation :
- 1.75W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Max Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- Lead Free :
- Lead Free
- Current Rating :
- 2A
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Factory Lead Time :
- 9 Weeks
- Collector Emitter Voltage (VCEO) :
- 100V
- Base Part Number :
- KSH112
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Height :
- 2.3mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Width :
- 6.1mm
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 25MHz
- Number of Terminations :
- 2
- Number of Pins :
- 3
- hFE Min :
- 1000
- Transistor Type :
- NPN - Darlington
- Weight :
- 260.37mg
- Mounting Type :
- Surface Mount
- Polarity :
- NPN
- Length :
- 6.6mm
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Datasheets
- KSH112TM
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NPN - Darlington 150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH112TM Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 2A 3V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 25MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 2A volts.
KSH112TM Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz
KSH112TM Applications
There are a lot of ON Semiconductor
KSH112TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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