KSH122TF
- Mfr.Part #
- KSH122TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A DPAK
- Stock
- 32,204
- In Stock :
- 32,204
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Factory Lead Time :
- 15 Weeks
- Max Junction Temperature (Tj) :
- 150°C
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Saturation Voltage :
- 4V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- hFE Min :
- 100
- Transistor Type :
- NPN - Darlington
- Element Configuration :
- Single
- Current Rating :
- 8A
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 2.4mm
- Collector Emitter Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- NPN
- JEDEC-95 Code :
- TO-252AA
- Weight :
- 260.37mg
- Voltage - Rated DC :
- 100V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 10μA
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Base Part Number :
- KSH122
- Power Dissipation :
- 1.75W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2013
- Max Power Dissipation :
- 1.75W
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Max Collector Current :
- 8A
- Max Breakdown Voltage :
- 100V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Collector Emitter Voltage (VCEO) :
- 100V
- Operating Temperature :
- 150°C TJ
- Width :
- 6.1mm
- Number of Pins :
- 3
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.6mm
- Pbfree Code :
- yes
- Datasheets
- KSH122TF
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NPN - Darlington 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH122TF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 4A 4V.The collector emitter saturation voltage is 4V, which allows for maximum design flexibility.When VCE saturation is 4V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 8A volts can be achieved.
KSH122TF Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
KSH122TF Applications
There are a lot of ON Semiconductor
KSH122TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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