KSH122TF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

2

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

Max Power Dissipation :

1.75W

Collector Emitter Breakdown Voltage :

100V

Mount :

Surface Mount

Terminal Form :

Gull wing

Weight :

260.37mg

Number of Pins :

3

Polarity :

NPN

Current Rating :

8A

Max Junction Temperature (Tj) :

150°C

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

Collector Emitter Saturation Voltage :

4V

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Lead Free :

Lead Free

Number of Elements :

1

Mounting Type :

Surface Mount

Voltage - Rated DC :

100V

Factory Lead Time :

15 Weeks

Pbfree Code :

yes

Contact Plating :

Tin

JESD-30 Code :

R-PSSO-G2

Collector Base Voltage (VCBO) :

100V

Base Part Number :

KSH122

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-252AA

Current - Collector Cutoff (Max) :

10μA

Length :

6.6mm

Transistor Type :

NPN - Darlington

hFE Min :

100

ECCN Code :

EAR99

Published :

2013

Power Dissipation :

1.75W

Transistor Application :

SWITCHING

Height :

2.4mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Emitter Voltage (VCEO) :

100V

Max Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Max Collector Current :

8A

REACH SVHC :

No SVHC

Element Configuration :

Single

Width :

6.1mm

Emitter Base Voltage (VEBO) :

5V