KSH122ITU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

100V

RoHS Status :

ROHS3 Compliant

hFE Min :

1000

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

Current - Collector Cutoff (Max) :

10μA

Collector Emitter Saturation Voltage :

2V

Current Rating :

8A

Weight :

343.08mg

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Collector Emitter Breakdown Voltage :

100V

Operating Temperature :

150°C TJ

Transistor Type :

NPN - Darlington

Radiation Hardening :

No

Element Configuration :

Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

100V

Mount :

Through Hole

Number of Elements :

1

Max Power Dissipation :

1.75W

Factory Lead Time :

15 Weeks

Max Collector Current :

8A

Transistor Application :

SWITCHING

JESD-609 Code :

e3

ECCN Code :

EAR99

Number of Terminations :

3

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

Lead Free :

Lead Free

Base Part Number :

KSH122

Mounting Type :

Through Hole

Voltage - Rated DC :

100V

Polarity :

NPN

Published :

2013

Number of Pins :

3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Emitter Base Voltage (VEBO) :

5V