KSH112GTM_NB82051
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- Mfr.Part #
- KSH112GTM_NB82051
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A DPAK
- Stock
- 21,409
- In Stock ：
- 21,409
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSH112
- Supplier Device Package :
- D-Pak
- Mounting Type :
- Surface Mount
- Power - Max :
- 1.75W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Packaging :
- Tape and Reel (TR)
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Cutoff (Max) :
- 20μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Frequency - Transition :
- 25MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 2A
- Datasheets
- KSH112GTM_NB82051
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NPN - Darlington 150°C TJ 20μA TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH112GTM_NB82051 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 2A 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSH112GTM_NB82051 Features
the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the supplier device package of D-Pak
KSH112GTM_NB82051 Applications
There are a lot of ON Semiconductor
KSH112GTM_NB82051 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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