KSH117TF
- Mfr.Part #
- KSH117TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A DPAK
- Stock
- 49,327
- In Stock :
- 49,327
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -2A
- Terminal Form :
- Gull wing
- Width :
- 6.8mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Frequency - Transition :
- 25MHz
- Base Part Number :
- KSH117
- Current - Collector Cutoff (Max) :
- 20μA
- Transition Frequency :
- 25MHz
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Length :
- 6.6mm
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -100V
- Weight :
- 260.37mg
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 2A
- Mounting Type :
- Surface Mount
- Polarity :
- PNP
- Published :
- 2002
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Transistor Type :
- PNP - Darlington
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Breakdown Voltage :
- 100V
- Power Dissipation :
- 1.75W
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 1000
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 100V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 1.75W
- Radiation Hardening :
- No
- Height :
- 2.3mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Voltage - Rated DC :
- -100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- KSH117TF
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PNP - Darlington 150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH117TF Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
KSH117TF Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 25MHz
KSH117TF Applications
There are a lot of ON Semiconductor
KSH117TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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