KSH112GTM

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Mfr.Part #
KSH112GTM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN DARL 100V 2A DPAK
Stock
8,004
In Stock :
8,004

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Base Part Number :
KSH112
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
RoHS Status :
RoHS Compliant
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Breakdown Voltage :
100V
Current Rating :
2A
Mounting Type :
Surface Mount
Transistor Type :
NPN - Darlington
Power Dissipation :
20W
Operating Temperature :
150°C TJ
Collector Emitter Saturation Voltage :
2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Collector Emitter Voltage (VCEO) :
100V
Element Configuration :
Single
Current - Collector Cutoff (Max) :
20μA
Frequency - Transition :
25MHz
Max Collector Current :
2A
Voltage - Rated DC :
100V
Polarity :
NPN
Continuous Collector Current :
2A
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 2A 3V
Collector Base Voltage (VCBO) :
100V
Number of Elements :
1
Emitter Base Voltage (VEBO) :
5V
Packaging :
Tape and Reel (TR)
Max Power Dissipation :
1.75W
Datasheets
KSH112GTM
Introducing Transistors - Bipolar (BJT) - Single onsemi KSH112GTM from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:KSH112, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, KSH112GTM pinout, KSH112GTM datasheet PDF, KSH112GTM amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSH112GTM ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSH112GTM


NPN - Darlington 150°C TJ 20μA 1 Elements TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

KSH112GTM Overview


In this device, the DC current gain is 1000 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).Maximum collector currents can be below 2A volts.

KSH112GTM Features


the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


KSH112GTM Applications


There are a lot of ON Semiconductor
KSH112GTM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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