KSA1381ESTU
- Mfr.Part #
- KSA1381ESTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.1A TO126-3
- Stock
- 14,544
- In Stock :
- 14,544
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Weight :
- 761mg
- Transition Frequency :
- 150MHz
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- Base Part Number :
- KSA1381
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Mount :
- Through Hole
- Power Dissipation :
- 7W
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Factory Lead Time :
- 20 Weeks
- Gain Bandwidth Product :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 10V
- Current - Collector (Ic) (Max) :
- 100mA
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 7W
- Published :
- 2005
- Frequency :
- 150MHz
- Length :
- 8mm
- Height :
- 14.2mm
- hFE Min :
- 40
- Collector Emitter Breakdown Voltage :
- -300V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- -300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.25mm
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -300V
- Collector Emitter Saturation Voltage :
- -600mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- Current Rating :
- -100mA
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- -300V
- Max Collector Current :
- -100mA
- Datasheets
- KSA1381ESTU

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
KSA1381ESTU Overview
In this device, the DC current gain is 100 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 2mA, 20mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 300V.Maximum collector currents can be below -100mA volts.
KSA1381ESTU Features
the DC current gain for this device is 100 @ 10mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
KSA1381ESTU Applications
There are a lot of ON Semiconductor
KSA1381ESTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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