KSA1381ESTU

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Mfr.Part #
KSA1381ESTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 300V 0.1A TO126-3
Stock
14,544
In Stock :
14,544

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Pins :
3
Emitter Base Voltage (VEBO) :
-5V
Transistor Type :
PNP
JESD-609 Code :
e3
Weight :
761mg
Transition Frequency :
150MHz
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
600mV @ 2mA, 20mA
Base Part Number :
KSA1381
Terminal Finish :
Tin (Sn)
Packaging :
Tube
Mounting Type :
Through Hole
REACH SVHC :
No SVHC
Radiation Hardening :
No
Package / Case :
TO-225AA, TO-126-3
Mount :
Through Hole
Power Dissipation :
7W
Voltage - Collector Emitter Breakdown (Max) :
300V
Factory Lead Time :
20 Weeks
Gain Bandwidth Product :
150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 10V
Current - Collector (Ic) (Max) :
100mA
Number of Elements :
1
Max Junction Temperature (Tj) :
150°C
Lead Free :
Lead Free
Max Power Dissipation :
7W
Published :
2005
Frequency :
150MHz
Length :
8mm
Height :
14.2mm
hFE Min :
40
Collector Emitter Breakdown Voltage :
-300V
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
-300V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
3.25mm
Transistor Application :
AMPLIFIER
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Voltage - Rated DC :
-300V
Collector Emitter Saturation Voltage :
-600mV
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Pbfree Code :
yes
Current Rating :
-100mA
Operating Temperature :
-55°C~150°C TJ
Collector Base Voltage (VCBO) :
-300V
Max Collector Current :
-100mA
Datasheets
KSA1381ESTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA1381ESTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:KSA1381, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, KSA1381ESTU pinout, KSA1381ESTU datasheet PDF, KSA1381ESTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA1381ESTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA1381ESTU


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

KSA1381ESTU Overview


In this device, the DC current gain is 100 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 2mA, 20mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 300V.Maximum collector currents can be below -100mA volts.

KSA1381ESTU Features


the DC current gain for this device is 100 @ 10mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz


KSA1381ESTU Applications


There are a lot of ON Semiconductor
KSA1381ESTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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