KSA1281YTA
- Mfr.Part #
- KSA1281YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO92-3
- Stock
- 1,310
- In Stock :
- 1,310
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.1mm
- Voltage - Rated DC :
- -50V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Max Collector Current :
- 2A
- Factory Lead Time :
- 6 Weeks
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- -500mV
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Length :
- 5.1mm
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 8.2mm
- Packaging :
- Tape and Box (TB)
- Power Dissipation :
- 1W
- Element Configuration :
- Single
- Max Power Dissipation :
- 1W
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- hFE Min :
- 70
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 371.1027mg
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- KSA1281
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- -50V
- Frequency :
- 100MHz
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- -5V
- Current Rating :
- -2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Datasheets
- KSA1281YTA

PNP 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA1281YTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
KSA1281YTA Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
KSA1281YTA Applications
There are a lot of ON Semiconductor
KSA1281YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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