KSA1182YMTF
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- Mfr.Part #
- KSA1182YMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A SOT23-3
- Stock
- 61,082
- In Stock ：
- 61,082
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- -30V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Base Part Number :
- KSA1182
- Lead Free :
- Lead Free
- Current Rating :
- -500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 22 hours ago)
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 150mW
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Frequency :
- 200MHz
- Max Power Dissipation :
- 150mW
- Gain Bandwidth Product :
- 200MHz
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- -5V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Factory Lead Time :
- 6 Weeks
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 70
- Transition Frequency :
- 200MHz
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- -35V
- Transistor Type :
- PNP
- Published :
- 2008
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -100mV
- Weight :
- 30mg
- Datasheets
- KSA1182YMTF
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KSA1182YMTF Overview
DC current gain in this device equals 120 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -100mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 500mA volts.
KSA1182YMTF Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
KSA1182YMTF Applications
There are a lot of ON Semiconductor
KSA1182YMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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