KSA1182YMTF
- Mfr.Part #
- KSA1182YMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A SOT23-3
- Stock
- 61,082
- In Stock :
- 61,082
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -35V
- Element Configuration :
- Single
- Published :
- 2008
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 150mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Emitter Base Voltage (VEBO) :
- -5V
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 200MHz
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -100mV
- Max Power Dissipation :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 200MHz
- Current Rating :
- -500mA
- Base Part Number :
- KSA1182
- hFE Min :
- 70
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 22 hours ago)
- Operating Temperature :
- 150°C TJ
- Weight :
- 30mg
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Transition Frequency :
- 200MHz
- Number of Elements :
- 1
- Voltage - Rated DC :
- -30V
- Datasheets
- KSA1182YMTF

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KSA1182YMTF Overview
DC current gain in this device equals 120 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -100mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 500mA volts.
KSA1182YMTF Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
KSA1182YMTF Applications
There are a lot of ON Semiconductor
KSA1182YMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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