KSA1175GTA
- Mfr.Part #
- KSA1175GTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92S
- Stock
- 20,934
- In Stock :
- 20,934
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSA1175
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 150mA
- Frequency - Transition :
- 180MHz
- Power - Max :
- 250mW
- Datasheets
- KSA1175GTA

PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Tape & Box (TB) Through Hole
KSA1175GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
KSA1175GTA Features
the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
KSA1175GTA Applications
There are a lot of ON Semiconductor
KSA1175GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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