KSA1174PBU
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- Mfr.Part #
- KSA1174PBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A TO92S
- Stock
- 41,655
- In Stock ：
- 41,655
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Current - Collector Cutoff (Max) :
- 1μA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Current - Collector (Ic) (Max) :
- 50mA
- Transistor Type :
- PNP
- Packaging :
- Bulk
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Mounting Type :
- Through Hole
- Base Part Number :
- KSA1174
- Datasheets
- KSA1174PBU
PNP 150°C TJ 1μA TO-226-3, TO-92-3 Short Body Bulk Through Hole
KSA1174PBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.A 120V maximal voltage - Collector Emitter Breakdown is present in the device.
KSA1174PBU Features
the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
KSA1174PBU Applications
There are a lot of ON Semiconductor
KSA1174PBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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