KSA1156YS
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- Mfr.Part #
- KSA1156YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.5A TO126-3
- Stock
- 25,904
- In Stock ：
- 25,904
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 400V
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- KSA1156
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Polarity/Channel Type :
- PNP
- hFE Min :
- 30
- Lead Free :
- Lead Free
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1W
- Pbfree Code :
- yes
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10mA, 100mA
- Current Rating :
- -500mA
- Packaging :
- Bulk
- Turn Off Time-Max (toff) :
- 5000ns
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Power Dissipation :
- 1W
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Mount :
- Through Hole
- Weight :
- 761mg
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -400V
- Collector Base Voltage (VCBO) :
- -400V
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- -1V
- Collector Emitter Voltage (VCEO) :
- 400V
- Element Configuration :
- Single
- Datasheets
- KSA1156YS
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSA1156YS Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 500mA volts.
KSA1156YS Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA
KSA1156YS Applications
There are a lot of ON Semiconductor
KSA1156YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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