KSA1156YS
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- Mfr.Part #
- KSA1156YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.5A TO126-3
- Stock
- 25,904
- In Stock ：
- 25,904
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Emitter Base Voltage (VEBO) :
- -7V
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Base Part Number :
- KSA1156
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -400V
- Collector Emitter Voltage (VCEO) :
- 400V
- Number of Pins :
- 3
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -1V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Mount :
- Through Hole
- Package / Case :
- TO-225AA, TO-126-3
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -400V
- Weight :
- 761mg
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 30
- Turn Off Time-Max (toff) :
- 5000ns
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10mA, 100mA
- Power Dissipation :
- 1W
- Current Rating :
- -500mA
- Collector Emitter Breakdown Voltage :
- 400V
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Datasheets
- KSA1156YS
KSA1156YS Documents
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSA1156YS Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 500mA volts.
KSA1156YS Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA
KSA1156YS Applications
There are a lot of ON Semiconductor
KSA1156YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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