KSA1156OSTSTU

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Mfr.Part #
KSA1156OSTSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 400V 0.5A TO126-3
Stock
3,003
In Stock :
3,003

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Rated DC :
-400V
Radiation Hardening :
No
ECCN Code :
EAR99
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
1V @ 10mA, 100mA
Current Rating :
-500mA
Emitter Base Voltage (VEBO) :
-7V
Collector Emitter Breakdown Voltage :
400V
Collector Emitter Saturation Voltage :
-1V
Lead Free :
Lead Free
RoHS Status :
RoHS Compliant
Max Collector Current :
500mA
Terminal Finish :
Tin (Sn)
Factory Lead Time :
48 Weeks
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
400V
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 100mA 5V
Package / Case :
TO-225AA, TO-126-3
Base Part Number :
KSA1156
Polarity/Channel Type :
PNP
Pbfree Code :
yes
Weight :
758mg
Number of Elements :
1
Power Dissipation :
1W
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Packaging :
Tube
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
hFE Min :
30
Current - Collector Cutoff (Max) :
100μA ICBO
Transistor Type :
PNP
Collector Base Voltage (VCBO) :
-400V
Element Configuration :
Single
Max Power Dissipation :
1W
Number of Pins :
3
Turn Off Time-Max (toff) :
5000ns
Datasheets
KSA1156OSTSTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA1156OSTSTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Base Part Number:KSA1156, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Pins:3, KSA1156OSTSTU pinout, KSA1156OSTSTU datasheet PDF, KSA1156OSTSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA1156OSTSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA1156OSTSTU


PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

KSA1156OSTSTU Overview


In this device, the DC current gain is 60 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 10mA, 100mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).Maximum collector currents can be below 500mA volts.

KSA1156OSTSTU Features


the DC current gain for this device is 60 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA


KSA1156OSTSTU Applications


There are a lot of ON Semiconductor
KSA1156OSTSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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