KSA1142OSTU
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- Mfr.Part #
- KSA1142OSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 180V 0.1A TO126-3
- Stock
- 7,426
- In Stock ：
- 7,426
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 8W
- Packaging :
- Tube
- Power - Max :
- 1.2W
- Width :
- 3.25mm
- Published :
- 2000
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- -5V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 180V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Current Rating :
- -100mA
- Weight :
- 761mg
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Max Collector Current :
- 100mA
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-225AA, TO-126-3
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Collector Emitter Saturation Voltage :
- -160mV
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 180V
- Transition Frequency :
- 180MHz
- Number of Elements :
- 1
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 180MHz
- Voltage - Rated DC :
- -180V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- -180V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Frequency :
- 180MHz
- Operating Temperature :
- 150°C TJ
- Height :
- 11mm
- Length :
- 8mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Max Power Dissipation :
- 8W
- ECCN Code :
- EAR99
- Datasheets
- KSA1142OSTU
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
KSA1142OSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 5V.With a collector emitter saturation voltage of -160mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 180MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
KSA1142OSTU Features
the DC current gain for this device is 100 @ 10mA 5V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 180MHz
KSA1142OSTU Applications
There are a lot of ON Semiconductor
KSA1142OSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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