KSA1015GRTA
- Mfr.Part #
- KSA1015GRTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 70
- Collector Base Voltage (VCBO) :
- -50V
- Element Configuration :
- Single
- Voltage - Rated DC :
- -50V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 400mW
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Height :
- 5.33mm
- Length :
- 5.2mm
- Lifecycle Status :
- LIFETIME (Last Updated: 18 hours ago)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transition Frequency :
- 80MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 80MHz
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -150mA
- Collector Emitter Saturation Voltage :
- -300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.19mm
- Max Collector Current :
- 150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Factory Lead Time :
- 6 Weeks
- Terminal Position :
- BOTTOM
- Max Breakdown Voltage :
- 50V
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Base Part Number :
- KSA1015
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 240mg
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Frequency :
- 80MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Power Dissipation :
- 400mW
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Datasheets
- KSA1015GRTA

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA1015GRTA Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
KSA1015GRTA Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 80MHz
KSA1015GRTA Applications
There are a lot of ON Semiconductor
KSA1015GRTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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