KSA1015GRTA
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- Mfr.Part #
- KSA1015GRTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- -5V
- hFE Min :
- 70
- Transition Frequency :
- 80MHz
- Power Dissipation :
- 400mW
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- LIFETIME (Last Updated: 18 hours ago)
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Current Rating :
- -150mA
- Collector Base Voltage (VCBO) :
- -50V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 5.33mm
- Frequency :
- 80MHz
- Length :
- 5.2mm
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 80MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 150mA
- Mounting Type :
- Through Hole
- Base Part Number :
- KSA1015
- Width :
- 4.19mm
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -300mV
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -50V
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Weight :
- 240mg
- Factory Lead Time :
- 6 Weeks
- Number of Terminations :
- 3
- Max Power Dissipation :
- 400mW
- Collector Emitter Voltage (VCEO) :
- 50V
- Datasheets
- KSA1015GRTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA1015GRTA Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
KSA1015GRTA Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 80MHz
KSA1015GRTA Applications
There are a lot of ON Semiconductor
KSA1015GRTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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