IXFR180N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Width :

5.21 mm

Reach Compliance Code :

Compliant

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 8mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

417 W

Terminal Position :

Single

Mounting Style :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

180A Tc

RoHS Status :

RoHS Compliant

Length :

16.13 mm

Package :

Tube

Product Category :

MOSFET

Turn-Off Delay Time :

140 ns

Number of Terminals :

3

Drain Current-Max (Abs) (ID) :

180 A

Power Dissipation :

400W

Pbfree Code :

yes

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

420nC @ 10V

Pulsed Drain Current-Max (IDM) :

720A

Product Status :

Active

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

RoHS :

Details

Minimum Operating Temperature :

- 55 C

FET Feature :

--

Rds On (Max) @ Id, Vgs :

6m Ω @ 500mA, 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Series :

HiPerFET™

Power Dissipation-Max :

417W Tc

Transistor Polarity :

N-Channel

Base Product Number :

IXFR180

Fall Time (Typ) :

55 ns

Configuration :

Single

Height :

21.34 mm

ECCN Code :

EAR99

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

DS Breakdown Voltage-Min :

70 V

Resistance :

6mOhm

Tradename :

HiPerFET

Rise Time :

90ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

ISOPLUS247™

Avalanche Energy Rating (Eas) :

3000 mJ

Published :

2000

Factory Lead Time :

8 Weeks

Package / Case :

ISOPLUS247™

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

70V

Transistor Application :

SWITCHING

Brand :

IXYS

Packaging :

Tube

Pin Count :

3

Product Type :

MOSFET

Power Dissipation (Max) :

417W (Tc)

Drain to Source Breakdown Voltage :

70V

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

Channel Mode :

Enhancement

Number of Pins :

3

FET Type :

N-Channel

Number of Terminations :

3

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.006 Ω

Continuous Drain Current (ID) :

180A

Element Configuration :

Single