IXFR120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

480A

Surface Mount :

No

Length :

16.13 mm

Terminal Form :

THROUGH-HOLE

Package Shape :

RECTANGULAR

Series :

HiPerFET™

Lead Free :

Lead Free

Package / Case :

ISOPLUS247™

Package :

Tube

JESD-609 Code :

e1

Tradename :

HyperFET

Case Connection :

Isolated

Product Type :

MOSFET

Qualification Status :

Not Qualified

Base Product Number :

IXFR120

ECCN Code :

EAR99

Rise Time :

65ns

Voltage - Rated DC :

200V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

200V

Product Category :

MOSFET

Mounting Style :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Maximum Operating Temperature :

+ 150 C

Published :

2003

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Number of Terminals :

3

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.017 Ω

Drain to Source Breakdown Voltage :

200V

Manufacturer :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Power Dissipation-Max :

417W Tc

Moisture Sensitivity Level (MSL) :

Not Applicable

Power Dissipation-Max (Abs) :

400 W

Factory Lead Time :

8 Weeks

Terminal Position :

Single

FET Type :

N-Channel

RoHS :

Details

Mount :

Through Hole

Pin Count :

3

Turn-Off Delay Time :

110 ns

Reach Compliance Code :

Compliant

Height :

21.34 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Type :

1 N-Channel

Power Dissipation (Max) :

417W (Tc)

Pbfree Code :

yes

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

DS Breakdown Voltage-Min :

200 V

Polarity/Channel Type :

N-Channel

Power Dissipation :

400W

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

105 A

Current Rating :

105A

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

105A Tc

Number of Terminations :

3

Product Status :

Not For New Designs

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

35 ns

Resistance :

17mOhm

Continuous Drain Current (ID) :

105A

Rds On (Max) @ Id, Vgs :

17m Ω @ 60A, 10V

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

Brand :

IXYS

Avalanche Energy Rating (Eas) :

3000 mJ

Minimum Operating Temperature :

- 55 C

Radiation Hardening :

No

Supplier Device Package :

ISOPLUS247™

Configuration :

Single

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 8mA

Width :

5.21 mm

Channel Mode :

Enhancement

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE