IXFR150N15

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Mfr.Part #
IXFR150N15
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 150V 105A ISOPLUS247
Stock
38,329
In Stock :
38,329

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
No
Transistor Application :
SWITCHING
Product Status :
Obsolete
Terminal Position :
Single
DS Breakdown Voltage-Min :
150 V
Reach Compliance Code :
Compliant
Rise Time :
60ns
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
105A Tc
Turn-Off Delay Time :
110 ns
Package Shape :
RECTANGULAR
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Drain to Source Voltage (Vdss) :
150V
Power Dissipation (Max) :
400W (Tc)
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pulsed Drain Current-Max (IDM) :
600A
Pin Count :
3
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.0125Ohm
FET Feature :
--
Fall Time (Typ) :
45 ns
JESD-30 Code :
R-PSIP-T3
RoHS Status :
RoHS Compliant
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
HiPerFET™
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
12.5m Ω @ 75A, 10V
Power Dissipation :
400W
Number of Terminals :
3
FET Type :
N-Channel
Published :
2000
Mount :
Through Hole
Avalanche Energy Rating (Eas) :
3000 mJ
Power Dissipation-Max :
400W Tc
Gate to Source Voltage (Vgs) :
20V
Number of Pins :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Manufacturer :
IXYS Corporation
Base Product Number :
IXFR150
Mounting Type :
Through Hole
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Packaging :
Tube
Number of Terminations :
3
Drain to Source Breakdown Voltage :
150V
Continuous Drain Current (ID) :
105A
Supplier Device Package :
ISOPLUS247™
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
JESD-609 Code :
e1
Operating Temperature :
-55°C~150°C TJ
Case Connection :
Isolated
Vgs(th) (Max) @ Id :
4V @ 8mA
Vgs (Max) :
±20V
Package / Case :
ISOPLUS247™
Datasheets
IXFR150N15
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR150N15 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:ISOPLUS247™, IXFR150N15 pinout, IXFR150N15 datasheet PDF, IXFR150N15 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR150N15 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR150N15


N-Channel Tube 12.5m Ω @ 75A, 10V ±20V 9100pF @ 25V 360nC @ 10V 150V ISOPLUS247™

IXFR150N15 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 105A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150 V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFR150N15 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 105A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 600A.
a 150V drain to source voltage (Vdss)


IXFR150N15 Applications


There are a lot of IXYS
IXFR150N15 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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