IXFR140N30P
- Mfr.Part #
- IXFR140N30P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 70A ISOPLUS247
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- Drain to Source Voltage (Vdss) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 300 W
- Tradename :
- HiPerFET
- DS Breakdown Voltage-Min :
- 300 V
- Packaging :
- Tube
- JESD-609 Code :
- e1
- Height :
- 21.34mm
- Width :
- 5.21mm
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Package Type :
- ISOPLUS247
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Maximum Operating Temperature :
- +150 °C
- Qualification :
- -
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Power Dissipation-Max :
- 300W Tc
- Surface Mount :
- No
- Minimum Operating Temperature :
- -55 °C
- Number of Elements per Chip :
- 1
- Configuration :
- Single
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 70A, 10V
- REACH SVHC :
- No SVHC
- Channel Type :
- N
- Package :
- Tube
- Series :
- HiPerFET™, PolarP2™
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 70A
- Rise Time :
- 30ns
- Brand :
- IXYS
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- JESD-30 Code :
- R-PSIP-T3
- Threshold Voltage :
- 5V
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 300W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Type :
- Polar Power MOSFET HiPerFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 300V
- Number of Pins :
- 3
- Package / Case :
- ISOPLUS247™
- Product Category :
- MOSFET
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Published :
- 2007
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation :
- 300W
- Pin Count :
- 3
- Continuous Drain Current Id :
- 82A
- Base Product Number :
- IXFR140
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Lead Free :
- Lead Free
- Number of Terminals :
- 3
- Transistor Type :
- 1 N-Channel
- Mounting Style :
- Through Hole
- Manufacturer :
- IXYS
- Continuous Drain Current (ID) :
- 82A
- Number of Channels :
- 1 Channel
- Fall Time (Typ) :
- 20 ns
- Mounting Type :
- Through Hole
- Isolation Voltage :
- 2.5kV
- Drain-source On Resistance-Max :
- 0.026ohm
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- ISOPLUS247™
- Terminal Position :
- Single
- Case Connection :
- Isolated
- Length :
- 16.13mm
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- Factory Lead Time :
- 30 Weeks
- FET Type :
- N-Channel
- MSL :
- -
- Product Type :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- -
- Datasheets
- IXFR140N30P
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N-Channel Tube 26m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V ISOPLUS247™
IXFR140N30P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 14800pF @ 25V.This device has a continuous drain current (ID) of [82A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 70A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 300 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFR140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFR140N30P Applications
There are a lot of IXYS
IXFR140N30P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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