IXFR140N30P
- Mfr.Part #
- IXFR140N30P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 70A ISOPLUS247
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 16.13mm
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Tradename :
- HiPerFET
- Continuous Drain Current (ID) :
- 82A
- Configuration :
- Single
- Published :
- 2007
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 70A
- Type :
- Polar Power MOSFET HiPerFET
- Series :
- HiPerFET™, PolarP2™
- Power Dissipation (Max) :
- 300W (Tc)
- Drain-source On Resistance-Max :
- 0.026ohm
- Height :
- 21.34mm
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 30 Weeks
- Reach Compliance Code :
- Compliant
- Threshold Voltage :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- IXYS
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation-Max (Abs) :
- 300 W
- Packaging :
- Tube
- Width :
- 5.21mm
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Channel Mode :
- Enhancement
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- FET Feature :
- -
- Product Category :
- MOSFET
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Voltage (Vdss) :
- 300V
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 70A, 10V
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Transistor Polarity :
- N-Channel
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Supplier Device Package :
- ISOPLUS247™
- Case Connection :
- Isolated
- Minimum Operating Temperature :
- -55 °C
- Terminal Position :
- Single
- Rise Time :
- 30ns
- Brand :
- IXYS
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Mounting Style :
- Through Hole
- Number of Elements per Chip :
- 1
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Fall Time (Typ) :
- 20 ns
- Drain to Source Breakdown Voltage :
- 300V
- Package Type :
- ISOPLUS247
- Number of Channels :
- 1 Channel
- Surface Mount :
- No
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DS Breakdown Voltage-Min :
- 300 V
- Channel Type :
- N
- Qualification :
- -
- Product Type :
- MOSFET
- Number of Terminals :
- 3
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- 1 N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Power Dissipation-Max :
- 300W Tc
- Package / Case :
- ISOPLUS247™
- Power Dissipation :
- 300W
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFR140
- Gate to Source Voltage (Vgs) :
- 20V
- Maximum Operating Temperature :
- +150 °C
- Continuous Drain Current Id :
- 82A
- RoHS :
- Details
- Isolation Voltage :
- 2.5kV
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Product Status :
- Active
- MSL :
- -
- Datasheets
- IXFR140N30P
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N-Channel Tube 26m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V ISOPLUS247™
IXFR140N30P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 14800pF @ 25V.This device has a continuous drain current (ID) of [82A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 70A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 300 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFR140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFR140N30P Applications
There are a lot of IXYS
IXFR140N30P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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