IXFR140N30P
- Mfr.Part #
- IXFR140N30P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 70A ISOPLUS247
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Type :
- ISOPLUS247
- REACH SVHC :
- No SVHC
- Configuration :
- Single
- Transistor Polarity :
- N-Channel
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 82A
- Maximum Operating Temperature :
- +150 °C
- MSL :
- -
- Factory Lead Time :
- 30 Weeks
- Product Status :
- Active
- Rise Time :
- 30ns
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Power Dissipation-Max :
- 300W Tc
- Drain-source On Resistance-Max :
- 0.026ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 70A, 10V
- Lead Free :
- Lead Free
- Series :
- HiPerFET™, PolarP2™
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Qualification Status :
- Not Qualified
- Height :
- 21.34mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 300V
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Number of Elements per Chip :
- 1
- Number of Channels :
- 1 Channel
- Type :
- Polar Power MOSFET HiPerFET
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Package / Case :
- ISOPLUS247™
- Channel Type :
- N
- DS Breakdown Voltage-Min :
- 300 V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- -55 °C
- Published :
- 2007
- Tradename :
- HiPerFET
- Polarity/Channel Type :
- N-Channel
- Length :
- 16.13mm
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- Radiation Hardening :
- No
- Transistor Type :
- 1 N-Channel
- Width :
- 5.21mm
- Fall Time (Typ) :
- 20 ns
- Continuous Drain Current Id :
- 82A
- Reach Compliance Code :
- Compliant
- Element Configuration :
- Single
- Qualification :
- -
- Power Dissipation-Max (Abs) :
- 300 W
- Terminal Form :
- THROUGH-HOLE
- Isolation Voltage :
- 2.5kV
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation (Max) :
- 300W (Tc)
- Manufacturer :
- IXYS
- Number of Terminals :
- 3
- ECCN Code :
- EAR99
- Power Dissipation :
- 300W
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 70A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- -
- Mounting Type :
- Through Hole
- Base Product Number :
- IXFR140
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tube
- Number of Pins :
- 3
- Threshold Voltage :
- 5V
- Case Connection :
- Isolated
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 300V
- Pin Count :
- 3
- Mounting Style :
- Through Hole
- Channel Mode :
- Enhancement
- Supplier Device Package :
- ISOPLUS247™
- Product Type :
- MOSFET
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Vgs (Max) :
- ±20V
- Datasheets
- IXFR140N30P
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N-Channel Tube 26m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V ISOPLUS247™
IXFR140N30P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 14800pF @ 25V.This device has a continuous drain current (ID) of [82A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 70A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 300 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFR140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFR140N30P Applications
There are a lot of IXYS
IXFR140N30P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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