IXFR140N30P

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Mfr.Part #
IXFR140N30P
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 300V 70A ISOPLUS247
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Input Capacitance (Ciss) (Max) @ Vds :
14800pF @ 25V
Drain to Source Voltage (Vdss) :
300V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max (Abs) :
300 W
Tradename :
HiPerFET
DS Breakdown Voltage-Min :
300 V
Packaging :
Tube
JESD-609 Code :
e1
Height :
21.34mm
Width :
5.21mm
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
5V @ 8mA
Package Type :
ISOPLUS247
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
70A Tc
Radiation Hardening :
No
Number of Terminations :
3
Maximum Operating Temperature :
+150 °C
Qualification :
-
Pulsed Drain Current-Max (IDM) :
300 A
Power Dissipation-Max :
300W Tc
Surface Mount :
No
Minimum Operating Temperature :
-55 °C
Number of Elements per Chip :
1
Configuration :
Single
Product Status :
Active
Rds On (Max) @ Id, Vgs :
26m Ω @ 70A, 10V
REACH SVHC :
No SVHC
Channel Type :
N
Package :
Tube
Series :
HiPerFET™, PolarP2™
Avalanche Energy Rating (Eas) :
5000 mJ
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
70A
Rise Time :
30ns
Brand :
IXYS
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
JESD-30 Code :
R-PSIP-T3
Threshold Voltage :
5V
RoHS :
Details
Transistor Polarity :
N-Channel
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
300W (Tc)
Terminal Form :
THROUGH-HOLE
Type :
Polar Power MOSFET HiPerFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
300V
Number of Pins :
3
Package / Case :
ISOPLUS247™
Product Category :
MOSFET
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Published :
2007
Turn-Off Delay Time :
100 ns
Power Dissipation :
300W
Pin Count :
3
Continuous Drain Current Id :
82A
Base Product Number :
IXFR140
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Lead Free :
Lead Free
Number of Terminals :
3
Transistor Type :
1 N-Channel
Mounting Style :
Through Hole
Manufacturer :
IXYS
Continuous Drain Current (ID) :
82A
Number of Channels :
1 Channel
Fall Time (Typ) :
20 ns
Mounting Type :
Through Hole
Isolation Voltage :
2.5kV
Drain-source On Resistance-Max :
0.026ohm
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Supplier Device Package :
ISOPLUS247™
Terminal Position :
Single
Case Connection :
Isolated
Length :
16.13mm
Number of Elements :
1
Channel Mode :
Enhancement
Factory Lead Time :
30 Weeks
FET Type :
N-Channel
MSL :
-
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
-
Datasheets
IXFR140N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR140N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Type:Polar Power MOSFET HiPerFET, Number of Pins:3, Package / Case:ISOPLUS247™, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, IXFR140N30P pinout, IXFR140N30P datasheet PDF, IXFR140N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR140N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR140N30P


N-Channel Tube 26m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V ISOPLUS247™

IXFR140N30P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 14800pF @ 25V.This device has a continuous drain current (ID) of [82A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 70A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 300 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFR140N30P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXFR140N30P Applications


There are a lot of IXYS
IXFR140N30P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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