IXFR100N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Package / Case :

ISOPLUS247™

Product Status :

Obsolete

Turn-Off Delay Time :

110 ns

Manufacturer :

IXYS

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

400A

RoHS Status :

RoHS Compliant

Packaging :

Tube

Package :

Tube

Vgs(th) (Max) @ Id :

4V @ 8mA

Channel Mode :

Enhancement

Pin Count :

3

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Rise Time :

55ns

Continuous Drain Current (ID) :

87A

Rds On (Max) @ Id, Vgs :

27m Ω @ 50A, 10V

Avalanche Energy Rating (Eas) :

3000 mJ

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Element Configuration :

Single

Qualification Status :

Not Qualified

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

250V

Number of Pins :

3

Product Category :

MOSFET

Product Type :

MOSFET

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Number of Terminals :

3

Number of Elements :

1

Fall Time (Typ) :

40 ns

Power Dissipation-Max :

400W Tc

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

21.34 mm

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Resistance :

27mOhm

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Base Product Number :

IXFR100

Gate to Source Voltage (Vgs) :

20V

RoHS :

Details

Power Dissipation :

400W

Published :

2001

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Drain to Source Breakdown Voltage :

250V

Package Shape :

RECTANGULAR

Series :

HiPerFET™

Width :

5.21 mm

Subcategory :

MOSFETs

Mounting Style :

Through Hole

Configuration :

Single

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Brand :

IXYS

JESD-609 Code :

e1

Mount :

Through Hole

Transistor Type :

1 N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Polarity :

N-Channel

Length :

16.13 mm

Tradename :

HyperFET

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.027 Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

400W (Tc)

Supplier Device Package :

ISOPLUS247™

DS Breakdown Voltage-Min :

250 V

Current - Continuous Drain (Id) @ 25°C :

87A Tc

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V