IXFR15N100Q3
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- Mfr.Part #
- IXFR15N100Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 10A ISOPLUS247
- Stock
- 30
- In Stock ：
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 247
- Turn-Off Delay Time :
- 30 ns
- Power Dissipation :
- 400W
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- Product Status :
- Active
- Manufacturer :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 250ns
- Drain to Source Breakdown Voltage :
- 1kV
- Factory Lead Time :
- 30 Weeks
- Channel Mode :
- Enhancement
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Packaging :
- Tube
- Tradename :
- HiPerFET
- Power Dissipation (Max) :
- 400W (Tc)
- Gate to Source Voltage (Vgs) :
- 30V
- Case Connection :
- Isolated
- Reach Compliance Code :
- Unknown
- RoHS :
- Details
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Channel Type :
- N
- JESD-30 Code :
- R-PSIP-T3
- Height :
- 21.34mm
- Drain to Source Voltage (Vdss) :
- 1000V
- FET Feature :
- --
- Base Product Number :
- IXFR15
- Element Configuration :
- Single
- Number of Elements per Chip :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Product Category :
- MOSFET
- Pin Count :
- 3
- Length :
- 16.13mm
- Power Dissipation-Max :
- 400W Tc
- Width :
- 5.21mm
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 45A
- Configuration :
- Single
- Mounting Style :
- Through Hole
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 3250pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 7.5A, 10V
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- Package Type :
- ISOPLUS247
- Supplier Device Package :
- ISOPLUS247™
- Published :
- 2011
- FET Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Turn On Delay Time :
- 28 ns
- Series :
- HiPerFET™
- Mount :
- Through Hole
- Datasheets
- IXFR15N100Q3
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N-Channel Tube 1.2 Ω @ 7.5A, 10V ±30V 3250pF @ 25V 64nC @ 10V 1000V TO-247-3
IXFR15N100Q3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 45A.A turn-on delay time of 28 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFR15N100Q3 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 45A.
a 1000V drain to source voltage (Vdss)
IXFR15N100Q3 Applications
There are a lot of IXYS
IXFR15N100Q3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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