IXFR102N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Subcategory :

MOSFETs

Rds On (Max) @ Id, Vgs :

36m Ω @ 51A, 10V

Product Status :

Active

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

250W (Tc)

Mounting Style :

Through Hole

Continuous Drain Current (ID) :

60A

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Width :

5.21 mm

Pulsed Drain Current-Max (IDM) :

250A

Pbfree Code :

yes

Configuration :

Single

Series :

PolarHT™ HiPerFET™

Channel Mode :

Enhancement

Number of Elements :

1

Package :

Box

Manufacturer :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Product Category :

MOSFET

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Factory Lead Time :

30 Weeks

Surface Mount :

No

DS Breakdown Voltage-Min :

300 V

Supplier Device Package :

ISOPLUS247™

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

2500 mJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Type :

PolarHT HiPerFET Power MOSFET

Length :

16.13 mm

Base Product Number :

IXFR102

FET Feature :

--

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 4mA

Brand :

IXYS

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

250W

Turn-Off Delay Time :

130 ns

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Height :

21.34 mm

Maximum Operating Temperature :

+ 150 C

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Package / Case :

ISOPLUS247™

JESD-609 Code :

e1

Fall Time (Typ) :

30 ns

Drain to Source Breakdown Voltage :

300V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

300V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Rise Time :

28ns

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

250W Tc

RoHS :

Details

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.036 Ω

Published :

2006

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Polarity :

N-Channel

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Product Type :

MOSFET

Tradename :

HiPerFET