IXFR140N20P
- Mfr.Part #
- IXFR140N20P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 90A ISOPLUS247
- Stock
- 24,488
- In Stock :
- 24,488
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Base Product Number :
- IXFR140
- Width :
- 5.21 mm
- Number of Pins :
- 247
- Package :
- Box
- ECCN Code :
- EAR99
- Product Type :
- MOSFET
- Factory Lead Time :
- 30 Weeks
- Element Configuration :
- Single
- Number of Elements :
- 1
- Product Status :
- Active
- Fall Time (Typ) :
- 90 ns
- Drain-source On Resistance-Max :
- 0.022 Ω
- Subcategory :
- MOSFETs
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- + 175 C
- Mounting Style :
- Through Hole
- Length :
- 16.13 mm
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Turn-Off Delay Time :
- 150 ns
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Polarity :
- N-Channel
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Qualification :
- -
- Resistance :
- 22mOhm
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Isolation Voltage :
- 2.5kV
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Continuous Drain Current (ID) :
- 90A
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Tradename :
- HiPerFET
- Minimum Operating Temperature :
- - 55 C
- Package / Case :
- ISOPLUS247™
- Channel Type :
- N Channel
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Power Dissipation :
- 300W
- RoHS :
- Details
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 45A, 10V
- Surface Mount :
- No
- FET Type :
- N-Channel
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Type :
- PolarHT HiPerFET Power MOSFET
- Number of Channels :
- 1 Channel
- MSL :
- -
- Pin Count :
- 3
- Power Dissipation (Max) :
- 300W (Tc)
- Series :
- PolarHT™ HiPerFET™
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSIP-T3
- Power Dissipation-Max :
- 300W Tc
- Case Connection :
- Isolated
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 200 V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current Id :
- 90A
- Transistor Type :
- 1 N-Channel
- Configuration :
- Single
- Published :
- 2006
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 280A
- Packaging :
- Tube
- Height :
- 21.34 mm
- Threshold Voltage :
- 5V
- Drain to Source Breakdown Voltage :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 200V
- Rise Time :
- 35ns
- Supplier Device Package :
- ISOPLUS247™
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~175°C TJ
- REACH SVHC :
- No SVHC
- Number of Terminals :
- 3
- Datasheets
- IXFR140N20P
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N-Channel Tube 22m Ω @ 45A, 10V ±20V 7500pF @ 25V 240nC @ 10V 200V ISOPLUS247™
IXFR140N20P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 4000 mJ.A device's maximum input capacitance is 7500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 150 ns.Its maximum pulsed drain current is 280A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFR140N20P Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 280A.
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IXFR140N20P Applications
There are a lot of IXYS
IXFR140N20P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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