IXFR140N20P

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Mfr.Part #
IXFR140N20P
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 200V 90A ISOPLUS247
Stock
24,488
In Stock :
24,488

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Base Product Number :
IXFR140
Width :
5.21 mm
Number of Pins :
247
Package :
Box
ECCN Code :
EAR99
Product Type :
MOSFET
Factory Lead Time :
30 Weeks
Element Configuration :
Single
Number of Elements :
1
Product Status :
Active
Fall Time (Typ) :
90 ns
Drain-source On Resistance-Max :
0.022 Ω
Subcategory :
MOSFETs
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+ 175 C
Mounting Style :
Through Hole
Length :
16.13 mm
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
4000 mJ
Turn-Off Delay Time :
150 ns
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Polarity :
N-Channel
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Brand :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Product Category :
MOSFET
Channel Mode :
Enhancement
Qualification :
-
Resistance :
22mOhm
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Isolation Voltage :
2.5kV
Vgs(th) (Max) @ Id :
5V @ 4mA
Continuous Drain Current (ID) :
90A
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Tradename :
HiPerFET
Minimum Operating Temperature :
- 55 C
Package / Case :
ISOPLUS247™
Channel Type :
N Channel
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Power Dissipation :
300W
RoHS :
Details
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
22m Ω @ 45A, 10V
Surface Mount :
No
FET Type :
N-Channel
JESD-609 Code :
e1
Lead Free :
Lead Free
Type :
PolarHT HiPerFET Power MOSFET
Number of Channels :
1 Channel
MSL :
-
Pin Count :
3
Power Dissipation (Max) :
300W (Tc)
Series :
PolarHT™ HiPerFET™
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSIP-T3
Power Dissipation-Max :
300W Tc
Case Connection :
Isolated
Mount :
Through Hole
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
200 V
Number of Terminations :
3
Radiation Hardening :
No
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current Id :
90A
Transistor Type :
1 N-Channel
Configuration :
Single
Published :
2006
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
280A
Packaging :
Tube
Height :
21.34 mm
Threshold Voltage :
5V
Drain to Source Breakdown Voltage :
200V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
200V
Rise Time :
35ns
Supplier Device Package :
ISOPLUS247™
Manufacturer :
IXYS
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~175°C TJ
REACH SVHC :
No SVHC
Number of Terminals :
3
Datasheets
IXFR140N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR140N20P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:247, Mounting Type:Through Hole, Package / Case:ISOPLUS247™, Type:PolarHT HiPerFET Power MOSFET, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, IXFR140N20P pinout, IXFR140N20P datasheet PDF, IXFR140N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR140N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR140N20P


N-Channel Tube 22m Ω @ 45A, 10V ±20V 7500pF @ 25V 240nC @ 10V 200V ISOPLUS247™

IXFR140N20P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 4000 mJ.A device's maximum input capacitance is 7500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 150 ns.Its maximum pulsed drain current is 280A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFR140N20P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 280A.
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)


IXFR140N20P Applications


There are a lot of IXYS
IXFR140N20P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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