IXFR12N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

15 ns

Tradename :

HiPerFET

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Channel Mode :

Enhancement

Package :

Tube

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Width :

5.21 mm

Rise Time :

23ns

Polarity/Channel Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Status :

Active

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

48A

Published :

2002

Case Connection :

Isolated

Base Product Number :

IXFR12

Operating Temperature :

-55°C~150°C TJ

Height :

21.34 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

ISOPLUS247™

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Transistor Type :

1 N-Channel

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

1.1 Ω

Surface Mount :

No

Length :

16.13 mm

Terminal Position :

Single

DS Breakdown Voltage-Min :

1000 V

Series :

HiPerFET™

Mount :

Through Hole

Turn-Off Delay Time :

40 ns

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

10 A

Transistor Polarity :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Details

Continuous Drain Current (ID) :

10A

Brand :

IXYS

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Transistor Element Material :

SILICON

Pin Count :

3

Vgs (Max) :

±20V

FET Type :

N-Channel

Element Configuration :

Single

Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 6A, 10V

Power Dissipation-Max (Abs) :

250 W

Qualification Status :

Not Qualified

Power Dissipation-Max :

250W Tc

Pbfree Code :

yes

Manufacturer :

IXYS

Number of Pins :

3

Drain to Source Voltage (Vdss) :

1000V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

ISOPLUS247™

Number of Terminations :

3

Power Dissipation (Max) :

250W (Tc)

Terminal Form :

THROUGH-HOLE

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Package Shape :

RECTANGULAR

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1 Channel

JESD-609 Code :

e1

Power Dissipation :

250W

Drain to Source Breakdown Voltage :

1kV

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

Number of Terminals :

3