IXFR15N80Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HyperFET

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Power Dissipation (Max) :

250W (Tc)

Operating Mode :

ENHANCEMENT MODE

Transistor Polarity :

N-Channel

Base Product Number :

IXFR15

Avalanche Energy Rating (Eas) :

1000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Number of Pins :

3

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

600m Ω @ 7.5A, 10V

Element Configuration :

Single

Number of Channels :

1 Channel

Max Operating Temperature :

150 °C

Power Dissipation-Max :

250W Tc

Supplier Device Package :

ISOPLUS247™

Width :

5.21 mm

Length :

16.13 mm

Power Dissipation-Max (Abs) :

250 W

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 25V

DS Breakdown Voltage-Min :

800 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On Max :

600 mΩ

Package / Case :

ISOPLUS247™

Min Operating Temperature :

-55 °C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS :

Compliant

Product Status :

Active

Series :

HiPerFET™

FET Type :

N-Channel

Case Connection :

Isolated

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Fall Time (Typ) :

16 ns

Transistor Type :

1 N-Channel

JESD-609 Code :

e1

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.6Ohm

Terminal Form :

THROUGH-HOLE

Drain Current-Max (Abs) (ID) :

13 A

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

13A

Reach Compliance Code :

Compliant

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

60A

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Configuration :

Single

Pbfree Code :

yes

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Package :

Tube

Mount :

Through Hole

Published :

2000

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Manufacturer :

IXYS

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

3

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

27ns

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Max Power Dissipation :

250 W

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Power Dissipation :

250W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Style :

Through Hole

Input Capacitance :

4.3 nF

Turn-Off Delay Time :

53 ns

Transistor Element Material :

SILICON

Drain to Source Resistance :

600 mΩ

Drain to Source Breakdown Voltage :

800V

Height :

21.34 mm

Brand :

IXYS

Drain to Source Voltage (Vdss) :

800V