IXBT42N170

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Base Product Number :

IXBT42

Manufacturer :

IXYS

Supplier Device Package :

TO-268

Min Operating Temperature :

-55 °C

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Switching Energy :

--

Current - Collector (Ic) (Max) :

80A

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Reverse Recovery Time (trr) :

1.32μs

Additional Feature :

LOW CONDUCTION LOSS

Collector Emitter Voltage (VCEO) :

1.7kV

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Elements :

1

Brand :

IXYS

Technology :

Si

Tradename :

BIMOSFET

Voltage - Collector Emitter Breakdown (Max) :

1700V

Current - Collector Pulsed (Icm) :

300A

Pin Count :

4

Maximum Operating Temperature :

+ 150 C

RoHS Status :

ROHS3 Compliant

Reverse Recovery Time :

1.32 μs

JESD-609 Code :

e3

Length :

16.05 mm

Collector Emitter Saturation Voltage :

2.3V

Base Part Number :

IXB*42N170

Terminal Form :

Gull wing

Gate Charge :

188nC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

1.7kV

Element Configuration :

Single

Qualification Status :

Not Qualified

Max Power Dissipation :

360W

Published :

2008

Turn On Delay Time :

45 ns

Td (on/off) @ 25°C :

--

Turn Off Time-Nom (toff) :

1070 ns

Lead Free :

Lead Free

Reach Compliance Code :

Unknown

Turn On Time :

224 ns

Factory Lead Time :

24 Weeks

Weight :

4.500005g

IGBT Type :

--

Test Condition :

--

Product Type :

IGBT Transistors

Case Connection :

COLLECTOR

Gate-Emitter Thr Voltage-Max :

5.5V

Turn-Off Delay Time :

560 ns

Mount :

Surface Mount

Width :

14 mm

JESD-30 Code :

R-PSSO-G2

Turn-On Delay Time :

45 ns

Product Category :

IGBT Transistors

Mounting Style :

SMD/SMT

Polarity/Channel Type :

N-Channel

RoHS :

Details

Configuration :

Single

Input Type :

Standard

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Operating Temperature :

150 °C

Terminal Finish :

PURE TIN

Power - Max :

360W

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 42A

Transistor Application :

POWER CONTROL

Height :

5.1 mm

Minimum Operating Temperature :

- 55 C

Package :

Tube

Gate-Emitter Voltage-Max :

20V

Packaging :

Tube

Number of Terminations :

2

Series :

BIMOSFET™

Continuous Collector Current :

70 A

Max Collector Current :

80A