IXBT10N170
- Mfr.Part #
- IXBT10N170
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- IGBT 1700V 20A 140W TO268
- Stock
- 5,995
- In Stock :
- 5,995
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Product Status :
- Active
- Manufacturer :
- IXYS
- Switching Energy :
- 6mJ (off)
- Published :
- 2003
- Reach Compliance Code :
- Unknown
- Operating Temperature Range :
- - 55 C to + 150 C
- Turn On Time :
- 63 ns
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Height :
- 5.1 mm
- Gate Charge :
- 30nC
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- IGBT Transistors
- Max Collector Current :
- 20A
- Base Product Number :
- IXBT10
- Input Type :
- Standard
- Technology :
- Si
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Turn Off Time-Nom (toff) :
- 1800 ns
- Length :
- 16.05 mm
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- IGBT Transistors
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Pulsed (Icm) :
- 40A
- Test Condition :
- 1360V, 10A, 56 Ω, 15V
- Transistor Application :
- POWER CONTROL
- Polarity/Channel Type :
- N-Channel
- Current - Collector (Ic) (Max) :
- 20A
- Mounting Style :
- SMD/SMT
- Brand :
- IXYS
- Factory Lead Time :
- 24 Weeks
- Power - Max :
- 140W
- Td (on/off) @ 25°C :
- 35ns/500ns
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 3.4V
- Collector Emitter Breakdown Voltage :
- 1.7kV
- Voltage - Collector Emitter Breakdown (Max) :
- 1700V
- IGBT Type :
- --
- Collector Emitter Voltage (VCEO) :
- 1.7kV
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Power Dissipation :
- 140W
- Max Power Dissipation :
- 140W
- Gate-Emitter Voltage-Max :
- 20V
- Terminal Finish :
- PURE TIN
- Configuration :
- Single
- Package :
- Tube
- Tradename :
- BIMOSFET
- Width :
- 14 mm
- Continuous Collector Current :
- 20 A
- Weight :
- 4.500005g
- Supplier Device Package :
- TO-268
- Reverse Recovery Time :
- 360 ns
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Reverse Recovery Time (trr) :
- 360ns
- Vce(on) (Max) @ Vge, Ic :
- 3.8V @ 15V, 10A
- Transistor Element Material :
- SILICON
- Series :
- BIMOSFET™
- Gate-Emitter Thr Voltage-Max :
- 5V
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXBT10N170

IXBT10N170 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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