IXBT10N170

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Product Status :

Active

Manufacturer :

IXYS

Switching Energy :

6mJ (off)

Published :

2003

Reach Compliance Code :

Unknown

Operating Temperature Range :

- 55 C to + 150 C

Turn On Time :

63 ns

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Surface Mount

Number of Elements :

1

Height :

5.1 mm

Gate Charge :

30nC

RoHS Status :

ROHS3 Compliant

Product Category :

IGBT Transistors

Max Collector Current :

20A

Base Product Number :

IXBT10

Input Type :

Standard

Technology :

Si

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Turn Off Time-Nom (toff) :

1800 ns

Length :

16.05 mm

Case Connection :

COLLECTOR

Number of Terminations :

2

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Product Type :

IGBT Transistors

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Pulsed (Icm) :

40A

Test Condition :

1360V, 10A, 56 Ω, 15V

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Current - Collector (Ic) (Max) :

20A

Mounting Style :

SMD/SMT

Brand :

IXYS

Factory Lead Time :

24 Weeks

Power - Max :

140W

Td (on/off) @ 25°C :

35ns/500ns

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

3.4V

Collector Emitter Breakdown Voltage :

1.7kV

Voltage - Collector Emitter Breakdown (Max) :

1700V

IGBT Type :

--

Collector Emitter Voltage (VCEO) :

1.7kV

Pbfree Code :

yes

Mount :

Surface Mount

Power Dissipation :

140W

Max Power Dissipation :

140W

Gate-Emitter Voltage-Max :

20V

Terminal Finish :

PURE TIN

Configuration :

Single

Package :

Tube

Tradename :

BIMOSFET

Width :

14 mm

Continuous Collector Current :

20 A

Weight :

4.500005g

Supplier Device Package :

TO-268

Reverse Recovery Time :

360 ns

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Reverse Recovery Time (trr) :

360ns

Vce(on) (Max) @ Vge, Ic :

3.8V @ 15V, 10A

Transistor Element Material :

SILICON

Series :

BIMOSFET™

Gate-Emitter Thr Voltage-Max :

5V

Minimum Operating Temperature :

- 55 C