IXBT16N170A
- Mfr.Part #
- IXBT16N170A
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- IGBT 1700V 16A 150W TO268
- Stock
- 1,915
- In Stock :
- 1,915
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 220 ns
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2000
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Additional Feature :
- LOW SWITCHING LOSSES
- JESD-30 Code :
- R-PSSO-G2
- Manufacturer :
- IXYS
- RoHS :
- Details
- Base Product Number :
- IXBT16
- Mounting Type :
- Surface Mount
- Height :
- 5.1mm
- Voltage - Rated DC :
- 1.7kV
- Turn On Time :
- 43 ns
- Mounting Style :
- SMD/SMT
- Product Status :
- Active
- Weight :
- 4.500005g
- Reverse Recovery Time (trr) :
- 360ns
- Product Category :
- IGBT Transistors
- Td (on/off) @ 25°C :
- 15ns/160ns
- Reach Compliance Code :
- not_compliant
- Collector Emitter Voltage (VCEO) :
- 1.7kV
- Input Type :
- Standard
- Current - Collector (Ic) (Max) :
- 16A
- Current Rating :
- 16A
- Number of Terminations :
- 2
- Length :
- 16.05mm
- Technology :
- Si
- Transistor Application :
- Motor Control
- Brand :
- IXYS
- Voltage - Collector Emitter Breakdown (Max) :
- 1700V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- BIMOSFET™
- Width :
- 14mm
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 1.7kV
- Turn On Delay Time :
- 15 ns
- Product Type :
- IGBT Transistors
- Gate Charge :
- 65nC
- Power - Max :
- 150W
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Pulsed (Icm) :
- 40A
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Transistor Element Material :
- SILICON
- Package :
- Bulk
- Power Dissipation :
- 150W
- Pbfree Code :
- yes
- Max Power Dissipation :
- 150W
- Gate-Emitter Voltage-Max :
- 20V
- Switching Energy :
- 1.2mJ (off)
- Reverse Recovery Time :
- 360 ns
- Factory Lead Time :
- 26 Weeks
- Vce(on) (Max) @ Vge, Ic :
- 6V @ 15V, 10A
- Test Condition :
- 1360V, 10A, 10 Ω, 15V
- IGBT Type :
- --
- Pin Count :
- 4
- Minimum Operating Temperature :
- - 55 C
- Max Collector Current :
- 16A
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Tradename :
- BIMOSFET
- Element Configuration :
- Single
- Supplier Device Package :
- TO-268
- Mount :
- Surface Mount
- Turn Off Time-Nom (toff) :
- 370 ns
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Fall Time-Max (tf) :
- 100ns
- Datasheets
- IXBT16N170A

IXBT16N170A datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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