IXBT2N250

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Package :

Tube

Package Shape :

RECTANGULAR

Series :

BIMOSFET™

Td (on/off) @ 25°C :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Switching Energy :

--

Power Dissipation-Max (Abs) :

32 W

Input Type :

Standard

Collector Emitter Breakdown Voltage :

2.5kV

Collector Current-Max (IC) :

5 A

Terminal Position :

Single

Terminal Form :

Gull wing

Max Operating Temperature :

150 °C

Published :

2009

Supplier Device Package :

TO-268

Mounting Style :

SMD/SMT

Vce(on) (Max) @ Vge, Ic :

3.5V @ 15V, 2A

Element Configuration :

Single

Additional Feature :

LOW CONDUCTION LOSS

Pin Count :

4

Reverse Recovery Time (trr) :

920ns

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

13A

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Turn On Time :

310 ns

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Base Product Number :

IXBT2

JESD-30 Code :

R-PSSO-G2

Technology :

Si

Lead Free :

Lead Free

Gate-Emitter Thr Voltage-Max :

5.5V

Tradename :

BIMOSFET

Factory Lead Time :

24 Weeks

Mount :

Surface Mount

Number of Terminations :

2

Case Connection :

COLLECTOR

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

32W

Surface Mount :

yes

Qualification Status :

Not Qualified

Brand :

IXYS

Product Status :

Active

Collector-Emitter Voltage-Max :

2500 V

Turn Off Time-Nom (toff) :

252 ns

Product Category :

IGBT Transistors

RoHS :

Compliant

Number of Terminals :

2

Pbfree Code :

yes

Power - Max :

32W

Collector Emitter Voltage (VCEO) :

2.5kV

Product Type :

IGBT Transistors

Min Operating Temperature :

-55 °C

Reverse Recovery Time :

920 ns

Max Collector Current :

5A

Maximum Operating Temperature :

+ 150 C

Gate Charge :

10.6nC

Test Condition :

--

JEDEC-95 Code :

TO-268AA

Packaging :

Tube

Transistor Element Material :

SILICON

Gate-Emitter Voltage-Max :

20V

Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

2500V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

IGBT Type :

--

Manufacturer :

IXYS

Current - Collector (Ic) (Max) :

5A