IXBT2N250
- Mfr.Part #
- IXBT2N250
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- IGBT 2500V 5A 32W TO268
- Stock
- 334
- In Stock :
- 334
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- * Fullname:
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Max Operating Temperature :
- 150 °C
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 5A
- Number of Terminations :
- 2
- Gate-Emitter Voltage-Max :
- 20V
- Turn Off Time-Nom (toff) :
- 252 ns
- Power Dissipation-Max (Abs) :
- 32 W
- Packaging :
- Tube
- Supplier Device Package :
- TO-268
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Product Category :
- IGBT Transistors
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Mounting Style :
- SMD/SMT
- Number of Terminals :
- 2
- Technology :
- Si
- Current - Collector Pulsed (Icm) :
- 13A
- JEDEC-95 Code :
- TO-268AA
- Factory Lead Time :
- 24 Weeks
- Collector Current-Max (IC) :
- 5 A
- Manufacturer :
- IXYS
- Max Collector Current :
- 5A
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Tradename :
- BIMOSFET
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Brand :
- IXYS
- Turn On Time :
- 310 ns
- Pbfree Code :
- yes
- Switching Energy :
- --
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Reverse Recovery Time (trr) :
- 920ns
- Test Condition :
- --
- Mounting Type :
- Surface Mount
- Product Type :
- IGBT Transistors
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 2.5kV
- Input Type :
- Standard
- Terminal Form :
- Gull wing
- Power - Max :
- 32W
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Td (on/off) @ 25°C :
- --
- Additional Feature :
- LOW CONDUCTION LOSS
- Transistor Application :
- POWER CONTROL
- Max Power Dissipation :
- 32W
- RoHS :
- Compliant
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 2.5kV
- Pin Count :
- 4
- IGBT Type :
- --
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-G2
- Series :
- BIMOSFET™
- Base Product Number :
- IXBT2
- Package Shape :
- RECTANGULAR
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- yes
- Min Operating Temperature :
- -55 °C
- Vce(on) (Max) @ Vge, Ic :
- 3.5V @ 15V, 2A
- Collector-Emitter Voltage-Max :
- 2500 V
- Element Configuration :
- Single
- Terminal Position :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 2500V
- Reverse Recovery Time :
- 920 ns
- Qualification Status :
- Not Qualified
- Gate Charge :
- 10.6nC
- Datasheets
- IXBT2N250

IXBT2N250 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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