IXBT42N170

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Max Collector Current :

80A

Turn Off Time-Nom (toff) :

1070 ns

Configuration :

Single

Turn-Off Delay Time :

560 ns

RoHS Status :

ROHS3 Compliant

Minimum Operating Temperature :

- 55 C

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-On Delay Time :

45 ns

Width :

14 mm

Published :

2008

Qualification Status :

Not Qualified

Product Status :

Active

Supplier Device Package :

TO-268

JESD-30 Code :

R-PSSO-G2

Brand :

IXYS

Max Operating Temperature :

150 °C

Case Connection :

COLLECTOR

Package :

Tube

Continuous Collector Current :

70 A

Product Category :

IGBT Transistors

Reach Compliance Code :

Unknown

Number of Elements :

1

Pbfree Code :

yes

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reverse Recovery Time (trr) :

1.32μs

Current - Collector (Ic) (Max) :

80A

Collector Emitter Breakdown Voltage :

1.7kV

Manufacturer :

IXYS

Mounting Style :

SMD/SMT

Maximum Operating Temperature :

+ 150 C

IGBT Type :

--

Gate Charge :

188nC

Technology :

Si

Terminal Finish :

PURE TIN

Power - Max :

360W

Series :

BIMOSFET™

Factory Lead Time :

24 Weeks

JESD-609 Code :

e3

Voltage - Collector Emitter Breakdown (Max) :

1700V

Collector Emitter Voltage (VCEO) :

1.7kV

Transistor Element Material :

SILICON

Tradename :

BIMOSFET

Td (on/off) @ 25°C :

--

Element Configuration :

Single

Length :

16.05 mm

Lead Free :

Lead Free

Pin Count :

4

Test Condition :

--

Weight :

4.500005g

Base Part Number :

IXB*42N170

Turn On Delay Time :

45 ns

Mounting Type :

Surface Mount

Packaging :

Tube

Terminal Form :

Gull wing

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

RoHS :

Details

Height :

5.1 mm

Gate-Emitter Thr Voltage-Max :

5.5V

Base Product Number :

IXBT42

Max Power Dissipation :

360W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

2.3V

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 42A

Product Type :

IGBT Transistors

Reverse Recovery Time :

1.32 μs

Number of Terminations :

2

Current - Collector Pulsed (Icm) :

300A

Input Type :

Standard

Transistor Application :

POWER CONTROL

Switching Energy :

--

Additional Feature :

LOW CONDUCTION LOSS

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

224 ns

Min Operating Temperature :

-55 °C