IXBT42N170

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Supplier Device Package :

TO-268

RoHS :

Details

Product Type :

IGBT Transistors

Product Status :

Active

Max Power Dissipation :

360W

Voltage - Collector Emitter Breakdown (Max) :

1700V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

560 ns

Manufacturer :

IXYS

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Length :

16.05 mm

Number of Terminations :

2

Turn-On Delay Time :

45 ns

Gate-Emitter Voltage-Max :

20V

Turn Off Time-Nom (toff) :

1070 ns

Collector Emitter Breakdown Voltage :

1.7kV

Mounting Style :

SMD/SMT

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Case Connection :

COLLECTOR

Reach Compliance Code :

Unknown

Collector Emitter Saturation Voltage :

2.3V

Reverse Recovery Time (trr) :

1.32μs

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Collector Current :

70 A

Transistor Element Material :

SILICON

Pin Count :

4

Input Type :

Standard

Pbfree Code :

yes

Additional Feature :

LOW CONDUCTION LOSS

Power - Max :

360W

Series :

BIMOSFET™

Terminal Finish :

PURE TIN

Current - Collector (Ic) (Max) :

80A

Turn On Delay Time :

45 ns

Width :

14 mm

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Td (on/off) @ 25°C :

--

Maximum Operating Temperature :

+ 150 C

Brand :

IXYS

Terminal Form :

Gull wing

Base Part Number :

IXB*42N170

Transistor Application :

POWER CONTROL

Min Operating Temperature :

-55 °C

Current - Collector Pulsed (Icm) :

300A

IGBT Type :

--

Minimum Operating Temperature :

- 55 C

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 42A

Reverse Recovery Time :

1.32 μs

Base Product Number :

IXBT42

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Tradename :

BIMOSFET

Switching Energy :

--

Collector Emitter Voltage (VCEO) :

1.7kV

Height :

5.1 mm

Qualification Status :

Not Qualified

Factory Lead Time :

24 Weeks

Turn On Time :

224 ns

Operating Temperature :

-55°C~150°C TJ

Weight :

4.500005g

Test Condition :

--

Max Operating Temperature :

150 °C

Max Collector Current :

80A

Configuration :

Single

Gate Charge :

188nC

Gate-Emitter Thr Voltage-Max :

5.5V

Product Category :

IGBT Transistors

Lead Free :

Lead Free

Technology :

Si