IRLHS6276TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

20V

Fall Time (Typ) :

4.9 ns

Resistance :

45mOhm

Published :

2011

Element Configuration :

Dual

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

10 ns

Base Part Number :

IRLHS6276PBF

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

Package / Case :

6-VQFN

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

3.1nC @ 4.5V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Series :

HEXFET®

Max Power Dissipation :

1.5W

REACH SVHC :

No SVHC

Mount :

Surface Mount

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Rise Time :

9.3ns

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

3.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Continuous Drain Current (ID) :

4.5A

Drain to Source Breakdown Voltage :

20V

Nominal Vgs :

800 mV

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 10V

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.4A, 4.5V

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.5W

Turn On Delay Time :

4.4 ns