IRLH7134TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

75ns

Radiation Hardening :

No

Terminal Form :

Flat

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 4.5V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±16V

Turn On Delay Time :

21 ns

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 50A, 10V

Gate to Source Voltage (Vgs) :

16V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3720pF @ 25V

Series :

HEXFET®

Mount :

Surface Mount

Power Dissipation :

3.6W

Package / Case :

8-PowerTDFN

Continuous Drain Current (ID) :

26A

Terminal Position :

Dual

DS Breakdown Voltage-Min :

40V

JESD-30 Code :

R-PDSO-F5

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Drain to Source Voltage (Vdss) :

40V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

18 ns

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Fall Time (Typ) :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

52 Weeks

Current - Continuous Drain (Id) @ 25°C :

26A Ta 85A Tc

Pulsed Drain Current-Max (IDM) :

640A

Drain-source On Resistance-Max :

0.0033Ohm

Power Dissipation-Max :

3.6W Ta 104W Tc

Number of Terminations :

5

Packaging :

Tape and Reel (TR)