IRLH7134TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3.6W

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F5

Drain to Source Voltage (Vdss) :

40V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

40V

Turn-Off Delay Time :

18 ns

Turn On Delay Time :

21 ns

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

26A Ta 85A Tc

Power Dissipation-Max :

3.6W Ta 104W Tc

Fall Time (Typ) :

13 ns

Gate to Source Voltage (Vgs) :

16V

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±16V

Number of Terminations :

5

Transistor Element Material :

SILICON

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

640A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 4.5V

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Factory Lead Time :

52 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

3720pF @ 25V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 50A, 10V

Published :

2013

Continuous Drain Current (ID) :

26A

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Rise Time :

75ns

Drain-source On Resistance-Max :

0.0033Ohm

Series :

HEXFET®

Number of Elements :

1