IRLH5034TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5.1562mm

REACH SVHC :

No SVHC

Turn-Off Delay Time :

31 ns

Input Capacitance :

4.73nF

Max Operating Temperature :

150°C

Radiation Hardening :

No

Height :

810μm

Current - Continuous Drain (Id) @ 25°C :

29A Ta 100A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4730pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

38 ns

Continuous Drain Current (ID) :

100A

Number of Pins :

8

Mounting Type :

Surface Mount

Threshold Voltage :

1V

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Series :

HEXFET®

Number of Elements :

1

Max Power Dissipation :

3.6W

Package / Case :

8-PowerVDFN

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 50A, 10V

Published :

2013

Nominal Vgs :

1 V

Length :

5mm

Turn On Delay Time :

21 ns

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Drain to Source Resistance :

2.7MOhm

Supplier Device Package :

8-PQFN (5x6)

Fall Time (Typ) :

21 ns

RoHS Status :

RoHS Compliant

Rds On Max :

2.4 mΩ

Vgs(th) (Max) @ Id :

2.5V @ 150μA

Packaging :

Cut Tape (CT)

Rise Time :

54ns

Gate to Source Voltage (Vgs) :

16V

FET Type :

N-Channel

Power Dissipation :

156W

Drain to Source Breakdown Voltage :

40V